IRF7201TRPBF, MOSFET MOSFT 30V 7A 30mOhm 19nC

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250 руб.

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Номенклатурный номер: 8005401871

Артикул: IRF7201TRPBF

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор N-МОП, полевой, 30В, 7А, 2,5Вт, SO8

Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	19 ns
Forward Transconductance - Min:	5.8 S
Id - Continuous Drain Current:	7.3 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOIC-8
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19 nC
Rds On - Drain-Source Resistance:	30 mOhms
Rise Time:	35 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	7 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	7.3 A
Maximum Drain Source Resistance	50 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	1V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	HEXFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	19 nC @ 10 V
Width	4mm
Вес, г	0.54