IRFL014TRPBF-BE3, MOSFET 60V N-CH HEXFET MOSFET SOT-2
230 руб.
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200 руб.
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168 руб.
от 2500 шт. —
145.70 руб.
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Описание
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain |
| ECCN (US) | EAR99 |
| Maximum Continuous Drain Current (A) | 2.7 |
| Maximum Drain Source Resistance (mOhm) | 200@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 4 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| Tab | Tab |
| Typical Fall Time (ns) | 19 |
| Typical Gate Charge @ Vgs (nC) | 11(Max)@10V |
| Typical Input Capacitance @ Vds (pF) | 300@25V |
| Typical Rise Time (ns) | 50 |
| Typical Turn-Off Delay Time (ns) | 13 |
| Typical Turn-On Delay Time (ns) | 10 |
Техническая документация
Datasheet
pdf, 297 КБ
