FDA20N50F

PartNumber: FDA20N50F
Ном. номер: 8006080454
Производитель: ON Semiconductor
FDA20N50F
Доступно на заказ 9 шт. Отгрузка со склада в г.Москва 5 дней.
320 руб. × = 320 руб.

Описание

UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-247, инфо: Полевой транзистор, N-канальный, 500 В, 22 А, 0.23 Ом, 280 Вт

Технические параметры

Channel Type
N
Channel Mode
Enhancement
Typical Turn-On Delay Time
45 ns
конфигурация
Single
тип упаковки
TO-3PN
высота
20.1mm
максимальная рабочая температура
+150 °C
ширина
5mm
Maximum Gate Source Voltage
±30 V
Typical Turn-Off Delay Time
100 ns
тип монтажа
Through Hole
длина
15.8mm
Typical Input Capacitance @ Vds
2550 pF@ 25 V
Typical Gate Charge @ Vgs
50 nC@ 10 V
Minimum Operating Temperature
-55 °C
Maximum Drain Source Voltage
500 V
размеры
15.8 x 5 x 20.1mm
Maximum Continuous Drain Current
22 A
Maximum Drain Source Resistance
0.26 Ω
Number of Elements per Chip
1
разрешение
High Voltage MOSFET, Uninterruptible Power Supply
Minimum Gate Threshold Voltage
3V
Pin Count
2
Максимальная рассеиваемая мощность
388 W

Дополнительная информация

FDA20N50F, N-Channel UniFET FRFET MOSFET 500V 22A 260mOhm Data Sheet