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IRF9640PBF

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см. техническую документацию

630 руб.

от 50 шт. — 440 руб.

от 100 шт. — 355 руб.

от 500 шт. — 280.95 руб.

Добавить в корзину 1 шт. на сумму 630 руб.

Альтернативные предложения1

Номенклатурный номер: 8006118929

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single

Описание Транзистор: P-MOSFET, полевой, -200В, -6,8А, 125Вт, TO220AB

Технические параметры

Base Product Number	IRF9640 ->
Current - Continuous Drain (Id) @ 25В°C	11A (Tc)
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Other Related Documents	http://www.vishay.com/docs/88869/packaging.pdf
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	500mOhm @ 6.6A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	11
Maximum Drain Source Resistance (mOhm)	500@10V
Typical Gate Charge @ Vgs (nC)	44(Max)@10V
Typical Gate Charge @ 10V (nC)	44(Max)
Typical Input Capacitance @ Vds (pF)	1200@25V
Maximum Power Dissipation (mW)	125000
Typical Fall Time (ns)	38
Typical Rise Time (ns)	43
Typical Turn-Off Delay Time (ns)	39
Typical Turn-On Delay Time (ns)	14
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Automotive	No
Pin Count	3
Supplier Package	TO-220AB
Standard Package Name	TO-220
Military	No
Mounting	Through Hole
Package Height	9.01(Max)
Package Length	10.41(Max)
Package Width	4.7(Max)
PCB changed	3
Tab	Tab
Lead Shape	Through Hole
Continuous Drain Current (Id) @ 25В°C	11A
Power Dissipation-Max (Ta=25В°C)	125W
Rds On - Drain-Source Resistance	500mО© @ 6.6A,10V
Transistor Polarity	P Channel
Vds - Drain-Source Breakdown Voltage	200V
Vgs - Gate-Source Voltage	4V @ 250uA
Brand	Vishay Semiconductors
Factory Pack Quantity	50
Fall Time	38 ns
Height	9.01 mm
Id - Continuous Drain Current	11 A
Length	10.41 mm
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Packaging	Tube
Pd - Power Dissipation	125 W
Rise Time	43 ns
RoHS	Details
Series	IRF/SIHF9640
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	39 ns
Typical Turn-On Delay Time	14 ns
Unit Weight	0.211644 oz
Width	4.7 mm
Maximum Continuous Drain Current	11 A
Maximum Drain Source Resistance	500 mΩ
Maximum Drain Source Voltage	200 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	125 W
Minimum Gate Threshold Voltage	2V
Package Type	TO-220AB
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	44 nC @ 10 V