SI3473CDV-T1-E3, MOSFET -12V Vds 8V Vgs TSOP-6
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см. техническую документацию
см. техническую документацию
59 руб.
Кратность заказа 3000 шт.
от 6000 шт. —
56 руб.
от 9000 шт. —
55 руб.
от 15000 шт. —
53.54 руб.
Добавить в корзину 3000 шт.
на сумму 177 000 руб.
Описание
Si3 TrenchFET® Power MOSFETs
Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TSOP-6 |
| Part # Aliases: | SI3473CDV-T1-BE3 SI3473CDV-E3 |
| Pd - Power Dissipation: | 4.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 65 nC |
| Rds On - Drain-Source Resistance: | 22 mOhms |
| Series: | SI3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet
pdf, 243 КБ
