FGH40N60UFD

2 140 руб.
от 2 шт.2 060 руб.
от 5 шт.2 000 руб.
Добавить в корзину 1 шт. на сумму 2 140 руб.
Номенклатурный номер: 8008980001
Страна происхождения: КИТАЙ
Бренд / Производитель: ON Semiconductor***

Описание

IGBT,N CH,W DIODE,600V,80A,TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:290W; Transistor Type:IGBT

Технические параметры

Base Part Number FGH40N60
Current - Collector (Ic) (Max) 80A
Current - Collector Pulsed (Icm) 120A
Gate Charge 120nC
IGBT Type Field Stop
Input Type Standard
Manufacturer ON Semiconductor
Mounting Type Through Hole
Operating Temperature -55В C ~ 150В C(TJ)
Package / Case TO-247-3
Packaging Tube
Part Status Active
Power - Max 290W
Reverse Recovery Time (trr) 45ns
Series -
Supplier Device Package TO-247
Switching Energy 1.19mJ(on), 460ВuJ(off)
Td (on/off) @ 25В°C 24ns/112ns
Test Condition 400V, 40A, 10 Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.4V 15V, 40A
Voltage - Collector Emitter Breakdown (Max) 600V
Вес, г 6.59