BD677A, Биполярный транзистор, NPN, составной (Darlington), 60 В, 4 А, 40 Вт
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1018 шт. со склада г.Москва, срок 10 дней
81 руб.
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Описание
Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы
Биполярный транзистор, NPN, составной (Darlington), 60 В, 4 А, 40 Вт
Технические параметры
| Корпус | to-126 | |
| Brand | STMicroelectronics | |
| Collector- Base Voltage VCBO | 60 V | |
| Collector- Emitter Voltage VCEO Max | 60 V | |
| Configuration | Single | |
| Continuous Collector Current | 4 A | |
| DC Collector/Base Gain hfe Min | 750 | |
| Emitter- Base Voltage VEBO | 5 V | |
| Factory Pack Quantity | 2000 | |
| Height | 10.8 mm | |
| Length | 7.8 mm | |
| Manufacturer | STMicroelectronics | |
| Maximum Collector Cut-off Current | 200 uA | |
| Maximum DC Collector Current | 4 A | |
| Maximum Operating Temperature | +150 C | |
| Mounting Style | Through Hole | |
| Package / Case | SOT-32-3 | |
| Packaging | Tube | |
| Pd - Power Dissipation | 40 W | |
| Product Category | Darlington Transistors | |
| RoHS | Details | |
| Series | Darlingtons | |
| Transistor Polarity | NPN | |
| Width | 2.7 mm | |
| Brand: | STMicroelectronics | |
| Collector- Base Voltage VCBO: | 60 V | |
| Collector- Emitter Voltage VCEO Max: | 60 V | |
| Configuration: | Single | |
| Continuous Collector Current: | 4 A | |
| DC Collector/Base Gain hfe Min: | 750 | |
| Emitter- Base Voltage VEBO: | 5 V | |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 | |
| Manufacturer: | STMicroelectronics | |
| Maximum Collector Cut-off Current: | 200 uA | |
| Maximum DC Collector Current: | 4 A | |
| Maximum Operating Temperature: | +150 C | |
| Mounting Style: | Through Hole | |
| Package / Case: | SOT-32-3 | |
| Packaging: | Tube | |
| Pd - Power Dissipation: | 40 W | |
| Product Category: | Darlington Transistors | |
| Product Type: | Darlington Transistors | |
| Series: | BD677A | |
| Subcategory: | Transistors | |
| Transistor Polarity: | NPN | |
| Automotive | No | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | Through Hole | |
| Maximum Collector Base Voltage (V) | 60 | |
| Maximum Collector Cut-Off Current (uA) | 200 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 2.8@40mA@2A | |
| Maximum Collector-Emitter Voltage (V) | 60 | |
| Maximum Continuous DC Collector Current (A) | 4 | |
| Maximum Emitter Base Voltage (V) | 5 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 40000 | |
| Minimum DC Current Gain | 750@2A@3V | |
| Minimum Operating Temperature (°C) | -65 | |
| Mounting | Through Hole | |
| Number of Elements per Chip | 1 | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-32 | |
| Supplier Temperature Grade | Industrial | |
| Tab | Tab | |
| Type | NPN | |
| Maximum Collector Base Voltage | 60 V | |
| Maximum Collector Emitter Saturation Voltage | 2.8 V | |
| Maximum Collector Emitter Voltage | 60 V | |
| Maximum Continuous Collector Current | 4 A | |
| Maximum Emitter Base Voltage | 5 V | |
| Minimum Operating Temperature | -65 °C | |
| Mounting Type | Through Hole | |
| Package Type | SOT-32 | |
| Transistor Configuration | Single | |
| Transistor Type | NPN | |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 377 КБ
Datasheet
pdf, 367 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 371 КБ
Datasheet
pdf, 377 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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