STB16NF06LT4, N-channel 60 V, 0.07 Ohm typ., 16 A STripFET II Power MOSFET ( D2PAK)
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100 шт. со склада г.Москва, срок 3 недели
420 руб.
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Описание
Описание Транзистор N-МОП, полевой, 60В 16A 45Вт 0,09Ом DІPak Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 16 |
| Maximum Drain Source Resistance (mOhm) | 90@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±16 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 45000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | STripFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Tab | Tab |
| Typical Fall Time (ns) | 12.5 |
| Typical Gate Charge @ Vgs (nC) | 7.3@5V |
| Typical Input Capacitance @ Vds (pF) | 345@25V |
| Typical Rise Time (ns) | 37 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Fall Time | 12.5 ns |
| Forward Transconductance - Min | 17 S |
| Height | 4.6 mm |
| Id - Continuous Drain Current | 16 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Pd - Power Dissipation | 45 W |
| Rds On - Drain-Source Resistance | 90 mOhms |
| Rise Time | 37 ns |
| RoHS | Details |
| Series | STB16NF06L |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 16 V |
| Width | 9.35 mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 12.5 ns |
| Forward Transconductance - Min: | 17 S |
| Id - Continuous Drain Current: | 16 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 45 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 7.3 nC |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Rise Time: | 37 ns |
| Series: | STB16NF06L |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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