IRF2807ZSTRLPBF, N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK IRF2807ZSTRLPBF

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Номенклатурный номер: 8011053840

Артикул: IRF2807ZSTRLPBF

Semiconductors\Discrete Semiconductors\MOSFETs

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	89 A
Maximum Drain Source Resistance	9.4 mΩ
Maximum Drain Source Voltage	75 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	170 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	HEXFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	71 nC @ 10 V
Width	9.65mm
Вес, г	1