IPB60R165CP, Транзистор N-МОП, полевой, 600 В 21 А 192 Вт TO-263-3

IPB60R165CP, Транзистор N-МОП, полевой, 600 В 21 А 192 Вт TO-263-3
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Номенклатурный номер: 8017532731
Артикул: IPB60R165CP

Описание

600V 21A 150mΩ@10V,12A 192W 3V@790uA N Channel TO-263 MOSFETs ROHS

Технические параметры

Continuous Drain Current (Id) 21A
Drain Source On Resistance (RDS(on)@Vgs,Id) 150mΩ@10V, 12A
Drain Source Voltage (Vdss) 600V
Gate Threshold Voltage (Vgs(th)@Id) 3V@790uA
Input Capacitance (Ciss@Vds) 2nF@100V
Operating Temperature -55℃~+150℃@(Tj)
Power Dissipation (Pd) 192W
Reverse Transfer Capacitance (Crss@Vds) -
Total Gate Charge (Qg@Vgs) 39nC@0~10V
Type N Channel
Brand: Infineon Technologies
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 1000
Fall Time: 5 ns
Id - Continuous Drain Current: 21 A
Manufacturer: Infineon
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: D2PAK-3(TO-263-3)
Part # Aliases: IPB6R165CPXT SP000096439 IPB60R165CPATMA1
Pd - Power Dissipation: 192 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 52 nC
Rds On - Drain-Source Resistance: 150 mOhms
Rise Time: 5 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 12 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Вес, г 1.85

Техническая документация

Datasheet
pdf, 257 КБ