SUD50P04-09L-E3

SUD50P04-09L-E3
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300 руб.
Кратность заказа 2000 шт.
от 4000 шт.270 руб.
от 6000 шт.259 руб.
Добавить в корзину 2000 шт. на сумму 600 000 руб.
Номенклатурный номер: 8025582021

Описание

TrenchFET® MOSFETs Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Технические параметры

Brand: Vishay Semiconductors
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2000
Fall Time: 140 ns
Forward Transconductance - Min: 73 S
Id - Continuous Drain Current: 50 A
Manufacturer: Vishay
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: DPAK-3(TO-252-3)
Part # Aliases: SUD50P04-09L
Pd - Power Dissipation: 136 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 102 nC
Rds On - Drain-Source Resistance: 9.4 mOhms
Rise Time: 60 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 145 ns
Typical Turn-On Delay Time: 10 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1 V

Техническая документация