Фото 1/3 MMBF170
Изображения служат только для ознакомления,
см. техническую документацию
12 руб.
Мин. кол-во для заказа 31 шт.
от 100 шт.11 руб.
от 1000 шт.9 руб.
Добавить в корзину 31 шт. на сумму 372 руб.
Альтернативные предложения1
Номенклатурный номер: 8025855680
Бренд / Производитель: ON Semiconductor***


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Технические параметры

Current - Continuous Drain (Id) @ 25В°C 500mA(Ta)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Manufacturer ON Semiconductor
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C(TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel(TR)
Part Status Active
Power Dissipation (Max) 300mW(Ta)
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
Series -
Supplier Device Package SOT-23
Technology MOSFET(Metal Oxide)
Vgs (Max) В±20V
Vgs(th) (Max) @ Id 3V @ 1mA
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 500 mA
Maximum Drain Source Resistance 5 Ω
Maximum Drain Source Voltage 60 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 300 mW
Minimum Gate Threshold Voltage 0.8V
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Transistor Material Si
Width 1.3mm
Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Id - Continuous Drain Current: 500 mA
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-23-3
Part # Aliases: MMBF170_NL
Pd - Power Dissipation: 300 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signals
Rds On - Drain-Source Resistance: 5 Ohms
Series: MMBF170
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV

Техническая документация

pdf, 1680 КБ
pdf, 904 КБ
pdf, 1298 КБ
pdf, 903 КБ
BS170, MMBF170
pdf, 837 КБ