PartNumber: IXA60IF1200NA
Ном. номер: 8060274825
Производитель: Ixys
Фото 1/2 IXA60IF1200NA
Фото 2/2 IXA60IF1200NA
Доступно на заказ 12 шт. Отгрузка со склада в г.Москва 5 дней.
1 480 руб. × = 1 480 руб.
от 2 шт. — 1 410 руб.
от 4 шт. — 1 340 руб.


IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

IGBT-транзистор, 1200 V. Технология 1200V XPT™ IGBT, GenX35. Рабочий ток (t=25 °C): 88 А. Корпус: SOT-227B MiniBLOC. Встроенный диод, ток диода: 51 А. Класс переключения: C3 Class, 20-60 кГц. Энергия выключения: 0,43 mJ. Тепловое сопротивление: 0,43 K/W.

Технические параметры

Channel Type
Dual Emitter
38.23 x 25.25 x 9.6mm
Maximum Collector Emitter Voltage
1200 V
Maximum Continuous Collector Current
88 A
Maximum Gate Emitter Voltage
максимальная рабочая температура
125 °C
Максимальная рассеиваемая мощность
290 W
Minimum Operating Temperature
-40 °C
тип монтажа
Surface Mount
тип упаковки
Pin Count

Дополнительная информация

Datasheet IXA60IF1200NA
IXA60IF1200NA, XPT IGBT, Copack