IRG4PC30UPBF, IGBT 600В 23А TO247AC
|200 руб.||×||=||200 руб.|
The IRG4PC30UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
• Optimized for specific application conditions
• Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs