SI4456DY-T1-E3

PartNumber: SI4456DY-T1-E3
Ном. номер: 8144144370
Производитель: Vishay
Фото 1/2 SI4456DY-T1-E3
Фото 2/2 SI4456DY-T1-E3
Доступно на заказ более 30 шт. Отгрузка со склада в г.Москва 3-4 недели.
161 руб. × = 161 руб.
от 10 шт. — 149 руб.
от 25 шт. — 134 руб.

Описание

MOSFETs
Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R

Технические параметры

EU RoHS
Compliant
Product Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
23
Maximum Drain Source Resistance (mOhm)
3.8@10V
Typical Gate Charge @ Vgs (nC)
81@10V|37.5@4.5V
Typical Gate Charge @ 10V (nC)
81
Typical Input Capacitance @ Vds (pF)
5670@20V
Maximum Power Dissipation (mW)
3500
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Turn-On Delay Time (ns)
145|21
Typical Turn-Off Delay Time (ns)
56|55
Typical Fall Time (ns)
15|8
Typical Rise Time (ns)
208|58
Mounting
Surface Mount
Package Height (mm)
1.55(Max)
Package Length (mm)
5(Max)
Package Width (mm)
4(Max)
PCB changed
8
Standard Package Name
SOP
Supplier Package
SOIC N
Pin Count
8
Lead Shape
Gull-wing

Дополнительная информация

Datasheet SI4456DY-T1-E3