DMT6016LFDF-7

PartNumber: DMT6016LFDF-7
Ном. номер: 8144197486
Производитель: Diodes Incorporated
Фото 1/2 DMT6016LFDF-7
Фото 2/2 DMT6016LFDF-7
Доступно на заказ 3000 шт. Отгрузка со склада в г.Москва 3-4 недели.
52 руб. × = 104 руб.
Минимальное количество для заказа 2 шт.
от 10 шт. — 43.90 руб.
от 25 шт. — 43.50 руб.

Описание

MOSFETs
Trans MOSFET N-CH 60V 8.9A Automotive 6-Pin UDFN EP T/R

Технические параметры

EU RoHS
Compliant
Product Category
Power MOSFET
Configuration
Single Quad Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
60
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
8.9
Maximum Gate Threshold Voltage (V)
3
Maximum Drain Source Resistance (mOhm)
16@10V
Typical Gate Charge @ Vgs (nC)
8.4@4.5V|17@10V
Typical Gate Charge @ 10V (nC)
17
Typical Input Capacitance @ Vds (pF)
864@30V
Maximum Power Dissipation (mW)
1900
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Turn-On Delay Time (ns)
3.4
Typical Turn-Off Delay Time (ns)
12.9
Typical Fall Time (ns)
6.8
Typical Rise Time (ns)
5.2
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Mounting
Surface Mount
Package Height (mm)
0.57
Package Length (mm)
2
Package Width (mm)
2
PCB changed
6
Standard Package Name
DFN
Supplier Package
UDFN EP
Pin Count
6
Lead Shape
No Lead

Дополнительная информация

DMT6016LFDF, 60V N-Channel Enhancement Mode MOSFET