IPG20N10S436AATMA1

PartNumber: IPG20N10S436AATMA1
Ном. номер: 8144938987
Производитель: Infineon Technologies
Доступно на заказ 4850 шт. Отгрузка со склада в г.Москва 3-4 недели.
94 руб. × = 94 руб.
от 10 шт. — 80.10 руб.
от 25 шт. — 79.20 руб.

Описание

MOSFETs
Trans MOSFET N-CH 100V 20A Automotive T/R

Технические параметры

EU RoHS
Compliant
Product Category
Power MOSFET
Configuration
Dual Dual Drain
Technology
OptiMOS-T2
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage (V)
100
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
20
Maximum Gate Threshold Voltage (V)
3.5
Maximum Drain Source Resistance (mOhm)
36@10V
Typical Gate Charge @ Vgs (nC)
9.4@10V
Typical Gate Charge @ 10V (nC)
9.4
Typical Input Capacitance @ Vds (pF)
660@25V
Maximum Power Dissipation (mW)
43000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Turn-On Delay Time (ns)
3
Typical Turn-Off Delay Time (ns)
4
Typical Fall Time (ns)
3
Typical Rise Time (ns)
1
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1