FDT86102LZ

PartNumber: FDT86102LZ
Ном. номер: 8145032455
Производитель: ON Semiconductor
Фото 1/2 FDT86102LZ
Фото 2/2 FDT86102LZ
Доступно на заказ 34 шт. Отгрузка со склада в г.Москва 3-4 недели.
58 руб. × = 116 руб.
Минимальное количество для заказа 2 шт.

Описание

PowerTrench® N-Channel MOSFET, up to 9A, Fairchild Semiconductor

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Технические параметры

Typical Turn-On Delay Time
6.6 ns
Maximum Continuous Drain Current
6.6 A
тип упаковки
SOT-223
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
разрешение
Power MOSFET
Typical Turn-Off Delay Time
19 ns
Minimum Operating Temperature
-55 °C
Pin Count
4
конфигурация
Dual Drain
Maximum Drain Source Voltage
100 V
Channel Type
N
тип монтажа
Surface Mount
Channel Mode
Enhancement
размеры
3.7 x 6.7 x 1.7mm
Typical Input Capacitance @ Vds
1118 pF@ 50 V
Typical Gate Charge @ Vgs
17 nC@ 0 → 10 V
длина
3.7mm
ширина
6.7mm
Максимальная рассеиваемая мощность
2.2 W
Minimum Gate Threshold Voltage
1V
максимальная рабочая температура
+150 °C
высота
1.7mm
Maximum Drain Source Resistance
0.046 Ω

Дополнительная информация

FDT86102LZ, PowerTrench 100V N-Channel MOSFET