SI4488DY-T1-GE3

PartNumber: SI4488DY-T1-GE3
Ном. номер: 8146196440
Производитель: Vishay
Фото 1/2 SI4488DY-T1-GE3
Фото 2/2 SI4488DY-T1-GE3
Доступно на заказ 1660 шт. Отгрузка со склада в г.Москва 3-4 недели.
159 руб. × = 159 руб.
от 10 шт. — 131 руб.
от 25 шт. — 129 руб.

Описание

MOSFETs
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R

Технические параметры

EU RoHS
Compliant
Product Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
150
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
3.5
Maximum Drain Source Resistance (mOhm)
50@10V
Typical Gate Charge @ Vgs (nC)
30@10V
Typical Gate Charge @ 10V (nC)
30
Maximum Power Dissipation (mW)
1560
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Turn-On Delay Time (ns)
12
Typical Turn-Off Delay Time (ns)
22
Typical Fall Time (ns)
10
Typical Rise Time (ns)
7
Mounting
Surface Mount
Package Height (mm)
1.55(Max)
Package Length (mm)
5(Max)
Package Width (mm)
4(Max)
PCB changed
8
Standard Package Name
SOP
Supplier Package
SOIC N
Pin Count
8
Lead Shape
Gull-wing

Дополнительная информация

Datasheet SI4488DY-T1-GE3