SI5406CDC-T1-GE3

PartNumber: SI5406CDC-T1-GE3
Ном. номер: 8147865185
Производитель: Vishay
SI5406CDC-T1-GE3
Доступно на заказ 2950 шт. Отгрузка со склада в г.Москва 3-4 недели.
67 руб. × = 134 руб.
Минимальное количество для заказа 2 шт.
от 10 шт. — 59.10 руб.
от 25 шт. — 58.40 руб.

Описание

MOSFETs
Trans MOSFET N-CH 12V 6A 8-Pin Chip FET T/R

Технические параметры

EU RoHS
Compliant
Product Category
Power MOSFET
Configuration
Single Hex Drain
Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
12
Maximum Gate Source Voltage (V)
±8
Maximum Continuous Drain Current (A)
6
Maximum Drain Source Resistance (mOhm)
20@4.5V
Typical Gate Charge @ Vgs (nC)
21@8V|11.5@4.5V
Typical Input Capacitance @ Vds (pF)
1100@6V
Maximum Power Dissipation (mW)
2300
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Turn-On Delay Time (ns)
10
Typical Turn-Off Delay Time (ns)
45
Typical Fall Time (ns)
20
Typical Rise Time (ns)
10
Mounting
Surface Mount
Package Height (mm)
1.1(Max)
Package Length (mm)
3.05
Package Width (mm)
1.65
PCB changed
8
Standard Package Name
Chip FET
Supplier Package
Chip FET
Pin Count
8
Lead Shape
Flat