IRLR3114ZTRPBF

PartNumber: IRLR3114ZTRPBF
Ном. номер: 8147988174
Производитель: Infineon Technologies
Фото 1/3 IRLR3114ZTRPBF
Фото 2/3 IRLR3114ZTRPBFФото 3/3 IRLR3114ZTRPBF
Доступно на заказ более 50 шт. Отгрузка со склада в г.Москва 3-4 недели.
84 руб. × = 84 руб.
от 10 шт. — 77.10 руб.
от 25 шт. — 76.10 руб.

Описание

MOSFETs
Trans MOSFET N-CH Si 40V 130A 3-Pin(2+Tab) DPAK T/R

Технические параметры

EU RoHS
Compliant
Product Category
Power MOSFET
Configuration
Single
Technology
HEXFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Material
Si
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
±16
Maximum Continuous Drain Current (A)
130
Maximum Drain Source Resistance (mOhm)
4.9@10V
Typical Gate Charge @ Vgs (nC)
40@4.5V
Typical Input Capacitance @ Vds (pF)
3810@25V
Maximum Power Dissipation (mW)
140000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Turn-On Delay Time (ns)
25
Typical Turn-Off Delay Time (ns)
33
Typical Fall Time (ns)
50
Typical Rise Time (ns)
140
Mounting
Surface Mount
Package Height (mm)
2.39(Max)
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO-252
Supplier Package
DPAK
Pin Count
3

Дополнительная информация

Datasheet IRLR3114ZTRPBF
IRLR3114ZPbF N-channel HEXFET Power MOSFET