AFBR-S4N66P024M, Silicon Photomultiplier Array, 2x1, 13.54mm x 6.54mm, 40µm/22428Microcells, 420nm, SMD, 16 Pin

AFBR-S4N66P024M is a Broadcom® 2×1 NUV-MT silicon photomultiplier array used for ultra-sensitive precision measurements of single photons. Two 6mm × 6mm SiPMs are arranged in a 2×1 element array with a pitch of 7mm. Larger areas can be covered with a SiPM-pitch of 7mm by tiling multiple arrays. The passivation layer is a clear epoxy mould compound (EMC) highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity towards blue and near-UV region of the light spectrum. The array is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials. Application includes X-ray and gamma ray detection, gamma ray spectroscopy, safety and security, nuclear medicine, positron emission tomography, life sciences, flow cytometry, high energy physics.

• Array size 13.54mm × 6.54mm, high PDE (63% at 420nm)
• Excellent SPTR and CRT
• Excellent uniformity of breakdown voltage
• Excellent uniformity of gain
• Four-side tilable, with high fill factors
• Cell pitch 40µm
• Highly transparent epoxy protection layer
• Operating temperature range from 0°C to +60°C
• Used in fluorescence-luminescence measurements, time-correlated single photon counting, astrophysics