AIKQ120N75CP2XKSA1
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Описание
The Infineon Automotive IGBT discrete is an EDT2 IGBT with a co-packed diode in the TO247PLUS package, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient, this enables easy paralleling operation, providing system flexibility and power scalability, and the 750 V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins, thus enabling high performant inverter systems.
Технические параметры
| Collector Emitter Saturation Voltage | 1.3В |
| Collector Emitter Voltage Max | 750В |
| Continuous Collector Current | 150А |
| Power Dissipation | 682Вт |
| Количество Выводов | 3вывод(-ов) |
| Максимальная Рабочая Температура | 175 C |
| Стандарты Автомобильной Промышленности | AEC-Q101 |
| Стиль Корпуса Транзистора | TO-247 Plus |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 750 V |
| Collector-Emitter Saturation Voltage: | 1.3 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 150 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Packaging: | Tube |
| Part # Aliases: | AIKQ120N75CP2 SP005416548 |
| Pd - Power Dissipation: | 682 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Maximum Collector Emitter Voltage | 750 V |
| Maximum Continuous Collector Current | 120 A |
| Maximum Gate Emitter Voltage | 15V |
| Maximum Power Dissipation | 170 W |
| Number of Transistors | 3 |
| Package Type | TO247PLUS |
