BC858C-7-F
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см. техническую документацию
см. техническую документацию
4 руб.
Мин. кол-во для заказа 120 шт.
Добавить в корзину 120 шт.
на сумму 480 руб.
Описание
Описание Транзистор: PNP, биполярный, 30В, 0,1А, 350мВт, SOT23 Характеристики
| Категория | Транзистор |
| Тип | биполярный |
| Вид | PNP |
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 30 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 420 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 200 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 310 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BC858 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Maximum Collector Base Voltage | -30 V |
| Maximum Collector Emitter Voltage | -30 V |
| Maximum DC Collector Current | -100 mA |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Frequency | 100 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 350 mW |
| Minimum DC Current Gain | 420 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
