BFU550XAR, Биполярный - РЧ транзистор, NPN, 12 В, 11 ГГц, 450 мВт, 50 мА, SOT-143B
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Описание
BFU5x NPN Wideband Silicon RF Transistors
Nexperia BFU5x NPN Wideband Silicon RF Transistors are AEC-Q101 qualified, low noise, high breakdown RF transistors suitable for small signal to medium power applications up to 2GHz. Offering exceptional performance, BFU5x RF Transistors generate 20dB of maximum gain and a noise figure of 0.7dB at 900MHz. These devices allow for better signal reception at low to medium power and enable RF receivers to operate more robustly in noisy environments. When used as (low-noise) amplifiers or oscillators, BFU5x RF Transistors support high supply voltages and high breakdown voltages. This makes these devices well-suited for automotive, communication, and industrial applications. The product family is available in a wide range of industry-standard packages, including SOT323, SOT23, and SOT143.
Nexperia BFU5x NPN Wideband Silicon RF Transistors are AEC-Q101 qualified, low noise, high breakdown RF transistors suitable for small signal to medium power applications up to 2GHz. Offering exceptional performance, BFU5x RF Transistors generate 20dB of maximum gain and a noise figure of 0.7dB at 900MHz. These devices allow for better signal reception at low to medium power and enable RF receivers to operate more robustly in noisy environments. When used as (low-noise) amplifiers or oscillators, BFU5x RF Transistors support high supply voltages and high breakdown voltages. This makes these devices well-suited for automotive, communication, and industrial applications. The product family is available in a wide range of industry-standard packages, including SOT323, SOT23, and SOT143.
Технические параметры
Brand: | NXP Semiconductors |
Collector- Base Voltage VCBO: | 24 V |
Collector- Emitter Voltage VCEO Max: | 16 V |
Configuration: | Single |
Continuous Collector Current: | 15 mA |
DC Collector/Base Gain hfe Min: | 60 |
DC Current Gain hFE Max: | 200 |
Emitter- Base Voltage VEBO: | 2 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 11 GHz |
Manufacturer: | NXP |
Maximum DC Collector Current: | 80 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | SMD/SMT |
Operating Frequency: | 900 MHz |
Operating Temperature Range: | -40 C to+150 C |
Output Power: | 13.5 dBm |
Package / Case: | SOT143B-4 |
Part # Aliases: | 934067708215 |
Pd - Power Dissipation: | 450 mW |
Product Category: | RF Bipolar Transistors |
Product Type: | RF Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Transistor Type: | Bipolar Wideband |
Type: | Wideband RF Transistor |
Current - Collector (Ic) (Max) | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 15mA, 8V |
Family | Transistors-Bipolar(BJT)-RF |
Frequency - Transition | 11GHz |
Gain | 21.5dB |
Manufacturer | NXP Semiconductors |
Mounting Type | Surface Mount, Gull Wing |
Noise Figure (dB Typ @ f) | 0.75db @ 900MHz |
Package / Case | TO-253-4, TO-253AA |
Packaging | Digi-Reel® |
Part Status | Active |
Power - Max | 450mW |
Series | Automotive, AEC-Q101 |
Standard Package | 1 |
Supplier Device Package | SOT-143B |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Вес, г | 0.3 |
Техническая документация
Datasheet
pdf, 281 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов