BPV10NF, Диод

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130 руб.
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Номенклатурный номер: 8007973622
Артикул: BPV10NF

Описание

Описание Точечный ИК-фотодиод, 940нм, 40°, Монтаж THT

Технические параметры

Diameter 5.75
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Through Hole
Lens Type Black Epoxy
Maximum Dark Current (nA) 5
Maximum Fall Time (ns) 2.5(Typ)
Maximum Forward Voltage (V) 1.3
Maximum Light Current (uA) 60(Typ)
Maximum Operating Temperature (°C) 100
Maximum Power Dissipation (mW) 215
Maximum Reverse Voltage (V) 60
Maximum Rise Time (ns) 2.5(Typ)
Minimum Operating Temperature (°C) -40
Mounting Through Hole
Part Status Active
PCB changed 2
Peak Wavelength (nm) 940
Photo Sensitivity 0.55A/W
Photodiode Material Si
Photodiode Type PIN
Pin Count 2
Polarity Forward
Standard Package Name T-1 3/4
Supplier Package T-1 3/4
Type Module
Brand Vishay Semiconductors
Dark Current 1 nA
Factory Pack Quantity 4000
Fall Time 2.5 ns
Half Intensity Angle Degrees 20 deg
Height 8.6 mm
If - Forward Current 50 mA
Length 5.75 mm
Manufacturer Vishay
Maximum Operating Temperature +100 C
Minimum Operating Temperature -40 C
Mounting Style Through Hole
Noise Equivalent Power - NEP 3E-14 W/sqrt Hz
Packaging Bulk
Pd - Power Dissipation 215 mW
Peak Wavelength 940 nm
Photocurrent 60 uA
Product PIN Photodiodes
Product Category Photodiodes
Responsivity 0.55 A/W
Rise Time 2.5 ns
RoHS Details
Vf - Forward Voltage 1 V
Vr - Reverse Voltage 60 V
Width 5.75 mm
Amplifier Function No
Diode Material Si
Maximum Wavelength Detected 1050nm
Minimum Wavelength Detected 790nm
Mounting Type Through Hole
Number of Pins 2
Package Type T-1 3/4
Peak Photo Sensitivity 0.55A/W
Spectrums Detected Infrared
Wavelength of Peak Sensitivity 940nm
Breakdown Voltage 60V
Series BPV10
Short Circuit Current 50µA
Typical Fall Time 2.5ns
Typical Rise Time 2.5ns
Вес, г 0.4

Техническая документация

Datasheet
pdf, 123 КБ
Datasheet BPV10NF
pdf, 131 КБ
Документация
pdf, 127 КБ