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C3M0280090D

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2 шт. со склада г.Москва, срок 10-11 дней

2 360 руб.

от 2 шт. — 2 190 руб.

Добавить в корзину 1 шт. на сумму 2 360 руб.

Альтернативные предложения3

Номенклатурный номер: 8004329533

Бренд: Wolfspeed (Cree)

Описание

Электроэлемент

MOSFET, N-CH, 900V, 11.5A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V;

Технические параметры

Brand	Wolfspeed/Cree
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	30
Fall Time	7.5 ns
Height	21.1 m
Id - Continuous Drain Current	11.5 A
Length	16.13 mm
Manufacturer	Cree, Inc.
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	54 W
Product	Power MOSFET
Product Category	MOSFET
Qg - Gate Charge	9.5 nC
Rds On - Drain-Source Resistance	280 mOhms
Rise Time	10 ns
RoHS	Details
Technology	SiC
Transistor Polarity	N-Channel
Type	Silicon Carbide MOSFET
Typical Turn-Off Delay Time	17.5 ns
Typical Turn-On Delay Time	26 ns
Unit Weight	1.340411 oz
Vds - Drain-Source Breakdown Voltage	900 V
Vgs th - Gate-Source Threshold Voltage	2.1 V
Width	5.21 mm
Channel Type	N
Forward Diode Voltage	4.8V
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Resistance	360 mΩ
Maximum Drain Source Voltage	900 V
Maximum Gate Source Voltage	-8 V, +18 V
Maximum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	54 W
Minimum Gate Threshold Voltage	1.8V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Transistor Material	SiC
Typical Gate Charge @ Vgs	9.5 nC @ 15 V
Вес, г	4.264