DMC3021LSD-13, MOSFET транзистор 30V 8.5A/7A [SOIC-8_150mil]

Фото 1/4 DMC3021LSD-13, MOSFET транзистор 30V 8.5A/7A [SOIC-8_150mil]
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см. техническую документацию
89 руб.
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Номенклатурный номер: 9000660510
Артикул: DMC3021LSD-13
Бренд: DIODES INC.

Описание

DMx Enhancement Mode MOSFETs
Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.

Технические параметры

Brand Diodes Incorporated
Channel Mode Enhancement
Configuration Dual
Factory Pack Quantity 2500
Fall Time 8.55 ns, 22.2 ns
Id - Continuous Drain Current 8.5 A, 7 A
Manufacturer Diodes Incorporated
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number Of Channels 2 Channel
Package / Case SOIC-8
Packaging Cut Tape or Reel
Pd - Power Dissipation 2.5 W
Product MOSFET Small Signal
Product Category MOSFET
Product Type MOSFET
Qg - Gate Charge 7.8 nC, 21.1 nC
Rds On - Drain-Source Resistance 21 mOhms, 39 mOhms
Rise Time 4.5 ns, 6.5 ns
Series DMC3021
Subcategory MOSFETs
Technology Si
Transistor Polarity N-Channel, P-Channel
Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 26.3 ns, 50.1 ns
Typical Turn-On Delay Time 5 ns, 10.1 ns
Vds - Drain-Source Breakdown Voltage 30 V
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1 V
Вес, г 0.07

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 814 КБ
Datasheet DMC3021LSD-13
pdf, 270 КБ
Datasheet DMC3021LSD-13
pdf, 402 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов