DS1245AB-120+, NVRAM, SRAM, 1 Мбит, 128К x 8бит, 120 нс, EDIP

PartNumber: DS1245AB-120+
Ном. номер: 8022899725
Производитель: Maxim Semiconductor
Фото 1/2 DS1245AB-120+, NVRAM, SRAM, 1 Мбит, 128К x 8бит, 120 нс, EDIP
Фото 2/2 DS1245AB-120+, NVRAM, SRAM, 1 Мбит, 128К x 8бит, 120 нс, EDIP
Доступно на заказ 14 шт. Отгрузка со склада в г.Москва 2-3 недели.
3 570 руб. × = 3 570 руб.
от 10 шт. — 3 400 руб.


The DS1245AB-120+ is a 1024K non-volatile SRAM in 32 pin EDIP package. This 1.048.576bit fully static non-volatile SRAM is organized as 131.072 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The DIP package DS1245 device can be used in place of existing 128K x 8 static RAMs directly conforming to popular bytewide 32 pin DIP standard. There is no limit on the number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

• Supply voltage range from 4.75V to 5.25V
• Operating temperature range from 0°C to 70°C
• 10 years minimum data retention in the absence of external power
• Data is automatically protected during power loss
• Low power CMOS technology
• Read and write access time of 120ns
• Write protection voltage of 4.62V
• 5pF input/output capacitance

Полупроводники - Микросхемы\Память\Энергонезависимая RAM

Технические параметры

Тип памяти
Минимальная Рабочая Температура
0 C
Максимальная Рабочая Температура
70 C
Максимальное Напряжение Питания
Минимальное Напряжение Питания
Количество Выводов
Время Доступа
Стиль Корпуса Микросхемы Памяти
Размер Памяти
Конфигурация Памяти NVRAM
128К x 8бит

Дополнительная информация

Datasheet DS1245AB-120+