IPG20N06S4L26ATMA1, MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2

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Номенклатурный номер: 8006258433

Артикул: IPG20N06S4L26ATMA1

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified.

Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	10 ns, 10 ns
Id - Continuous Drain Current:	20 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	TDSON-8
Part # Aliases:	IPG20N06S4L-26 SP000705588
Pd - Power Dissipation:	33 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	20 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	21 mOhms, 21 mOhms
Rise Time:	1.5 ns, 1.5 ns
Series:	OptiMOS-T2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	OptiMOS
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	18 ns, 18 ns
Typical Turn-On Delay Time:	5 ns, 5 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-16 V, +16 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	60 V
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SuperSO8 5x6
Pin Count	8
Вес, г	0.1