IPL60R360P6SATMA1, Силовой МОП-транзистор, N Канал, 600 В, 11.3 А, 0.32 Ом, SMD, Surface Mount
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Описание
CoolMOS™ CE Power MOSFETs Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 7 ns |
| Id - Continuous Drain Current: | 11.3 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | ThinPAK-56-8 |
| Part # Aliases: | IPL60R360P6S SP001163030 |
| Pd - Power Dissipation: | 89.3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 360 mOhms |
| Rise Time: | 7 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 0.39 |
Техническая документация
Datasheet IPL60R360P6SATMA1
pdf, 1326 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
