IPP410N30NAKSA1
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Описание
Электроэлемент
MOSFET, N-CH, 300V, 44A, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:300V, On Resistance Rds(on):0.036ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation, RoHS Compliant: Yes
Технические параметры
Transistor Polarity | N Channel; Continuous Drain Current Id |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 500 |
Fall Time: | 9 ns |
Forward Transconductance - Min: | 52 S |
Id - Continuous Drain Current: | 44 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Part # Aliases: | IPP410N30N SP001082134 |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 65 nC |
Rds On - Drain-Source Resistance: | 41 mOhms |
Rise Time: | 9 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | OptiMOS |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 43 ns |
Typical Turn-On Delay Time: | 16 ns |
Vds - Drain-Source Breakdown Voltage: | 300 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 44 A |
Maximum Drain Source Resistance | 0.041 Ω |
Maximum Drain Source Voltage | 300 V |
Maximum Gate Threshold Voltage | 4V |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Series | CoolMOS |
Transistor Material | Silicon |
Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1793 КБ
Datasheet IPP410N30NAKSA1
pdf, 1842 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов