IRF6616TRPBF, Силовой МОП-транзистор, N Канал, 40 В, 106 А, 0.0037 Ом, DirectFET MX, Surface Mount

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Номенклатурный номер: 8066174433

Артикул: IRF6616TRPBF

N-Channel 40V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFETв„ў MX

Base Product Number	IRF6616 ->
Current - Continuous Drain (Id) @ 25В°C	19A (Ta), 106A (Tc)
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44nC @ 4.5V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	3765pF @ 20V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-40В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	DirectFETв„ў Isometric MX
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs	5mOhm @ 19A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	HEXFETВ® ->
Supplier Device Package	DIRECTFETв„ў MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.25V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	106 A
Maximum Drain Source Resistance	0.005 O
Maximum Drain Source Voltage	40 V
Maximum Gate Threshold Voltage	2.25V
Number of Elements per Chip	1
Package Type	DirectFET ISOMETRIC
Transistor Material	Si
Вес, г	0.1