IRF7304PBF LPF INF
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см. техническую документацию
см. техническую документацию
68 руб.
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Добавить в корзину 298 шт.
на сумму 20 264 руб.
Альтернативные предложения1
Описание
Mosfet Array 2 P-Channel (Dual) 20V 4.3A 2W Поверхностный монтаж 8-SO
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 4.3A |
| Drain to Source Voltage (Vdss) | 20V |
| ECCN | EAR99 |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Power - Max | 2W |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 4.5V |
| REACH Status | REACH Unaffected |
| RoHS Status | RoHS non-compliant |
| Series | HEXFETВ® -> |
| Supplier Device Package | 8-SO |
| Vgs(th) (Max) @ Id | 700mV @ 250ВµA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Dual Dual Drain |
| Maximum Continuous Drain Current - (A) | 4.3 |
| Maximum Drain Source Resistance - (mOhm) | 90@4.5V |
| Maximum Drain Source Voltage - (V) | 20 |
| Maximum Gate Source Voltage - (V) | ??12 |
| Maximum Gate Threshold Voltage - (V) | 0.7(Min) |
| Maximum Power Dissipation - (mW) | 2000 |
| Military | No |
| Number of Elements per Chip | 2 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Standard Package Name | SOP |
| Supplier Package | SOIC |
| Typical Gate Charge @ Vgs - (nC) | 22(Max)@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 610@15V |
| Typical Output Capacitance - (pF) | 310 |
Техническая документация
IRF7304 Datasheet
pdf, 112 КБ
Datasheet IRF7304TRPBF
pdf, 231 КБ
