IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]
The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Fully avalanche rated