IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]

Артикул: IRF7343TRPBF
Ном. номер: 9000072123
Производитель: International Rectifier
Фото 1/3 IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]
Фото 2/3 IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]Фото 3/3 IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]
Есть в наличии более 250 шт. Отгрузка со склада в г.Москва
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от 25 шт. — 20 руб.
от 250 шт. — 19 руб.
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Описание

The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Fully avalanche rated

Техническая документация

irf7343pbf
pdf, 219 КБ

Дополнительная информация

Datasheet IRF7343TRPBF