IRFB5620PBF, МОП-транзистор, N Канал, 25 А, 200 В, 60 мОм, 10 В, 5 В
|150 руб.||×||=||150 руб.|
The IRFB5620PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier. It is suitable for full-bridge and push-pull application.
• Low RDS (ON) for improved efficiency
• Low Qg and Qsw for better THD and improved efficiency
• Low QRR for better THD and lower EMI
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