IRFL014TRPBF-BE3, MOSFET 60V N-CH HEXFET MOSFET SOT-2
230 руб.
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145.70 руб.
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Описание
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Drain |
ECCN (US) | EAR99 |
Maximum Continuous Drain Current (A) | 2.7 |
Maximum Drain Source Resistance (mOhm) | 200@10V |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 3 |
Pin Count | 4 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | SOT |
Supplier Package | SOT-223 |
Tab | Tab |
Typical Fall Time (ns) | 19 |
Typical Gate Charge @ Vgs (nC) | 11(Max)@10V |
Typical Input Capacitance @ Vds (pF) | 300@25V |
Typical Rise Time (ns) | 50 |
Typical Turn-Off Delay Time (ns) | 13 |
Typical Turn-On Delay Time (ns) | 10 |
Техническая документация
Datasheet
pdf, 297 КБ