IRG4BC30WPBF, IGBT 600В 23А TO220AB

Артикул: IRG4BC30WPBF
Ном. номер: 59163
Производитель: International Rectifier
Фото 1/2 IRG4BC30WPBF, IGBT 600В 23А TO220AB
Фото 2/2 IRG4BC30WPBF, IGBT 600В 23А TO220AB
Доступно на заказ более 10 шт. Отгрузка со склада в г.Москва 1-2 недели.
280 руб. × = 280 руб.
от 10 шт. — 170 руб.
от 20 шт. — 125.13 руб.

Описание

Single IGBT up to 20A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

Технические параметры

Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
2.7
Управляющее напряжение,В
6
Мощность макс.,Вт
Температурный диапазон,С
-55…150
Дополнительные опции
выдерживает 10мкс кз
Корпус

Техническая документация

IRG4BC30W Datasheet
pdf, 142 КБ

Дополнительная информация

IRG4BC30WPBF Data Sheet IRG4BC30WPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов