IRGPS4067DPBF, IGBT 600В 120А 8-30кГц TO274AA(Super247)

Артикул: IRGPS4067DPBF
Ном. номер: 9000158317
Производитель: International Rectifier
Фото 1/4 IRGPS4067DPBF, IGBT 600В 120А 8-30кГц TO274AA(Super247)
Фото 2/4 IRGPS4067DPBF, IGBT 600В 120А 8-30кГц TO274AA(Super247)Фото 3/4 IRGPS4067DPBF, IGBT 600В 120А 8-30кГц TO274AA(Super247)Фото 4/4 IRGPS4067DPBF, IGBT 600В 120А 8-30кГц TO274AA(Super247)
Есть в наличии более 30 шт. Отгрузка со склада в г.Москва
840 руб. × = 840 руб.
от 3 шт. — 800 руб.
от 30 шт. — 780 руб.
Цена и наличие в магазинах

Описание

Co-Pack IGBT over 21A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Технические параметры

Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
1.7
Управляющее напряжение,В
6.5
Мощность макс.,Вт
Крутизна характеристики, S
Температурный диапазон,С
-55…+175
Корпус

Техническая документация

irgps4067dpbf
pdf, 264 КБ

Дополнительная информация

Datasheet IRGPS4067DPBF
IRGPS4067DPbF, Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode IRGPS4067DPBF