IRL3705ZSTRLPBF, Trans MOSFET N-CH Si 55V 86A 3-Pin(2+Tab) D2PAK T/R

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240 руб.

Кратность заказа 800 шт.

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Добавить в корзину 800 шт. на сумму 192 000 руб.

Номенклатурный номер: 8013255461

Артикул: IRL3705ZSTRLPBF

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор N-МОП, полевой, HEXFET,logic level, 55В, 86А, 130Вт

Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	800
Fall Time:	83 ns
Forward Transconductance - Min:	150 S
Id - Continuous Drain Current:	86 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Part # Aliases:	IRL3705ZSTRLPBF SP001552564
Pd - Power Dissipation:	130 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	60 nC
Rds On - Drain-Source Resistance:	8 mOhms
Rise Time:	240 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	55 V
Vgs - Gate-Source Voltage:	-16 V, +16 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.3V
Maximum Continuous Drain Current	86 A
Maximum Drain Source Resistance	12 mΩ
Maximum Drain Source Voltage	55 V
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Gate Threshold Voltage	3V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	130 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	HEXFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	40 nC @ 5 V
Width	11.3mm
Вес, кг	175