IXTK90N25L2, 90 Amps 250V
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6 000 руб.
Кратность заказа 25 шт.
от 50 шт. —
5 880 руб.
Добавить в корзину 25 шт.
на сумму 150 000 руб.
Описание
N-канал 250V 90A (Tc) 960W (Tc) сквозное отверстие TO-264 (IXTK)
Технические параметры
| California Prop 65 | Warning Information |
| Current - Continuous Drain (Id) @ 25В°C | 90A (Tc) |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 640nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Power Dissipation (Max) | 960W (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 45A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | Linear L2в„ў -> |
| Supplier Device Package | TO-264 (IXTK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 3mA |
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |
| Fall Time: | 160 ns |
| Forward Transconductance - Min: | 35 S |
| Id - Continuous Drain Current: | 90 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-264-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 960 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 640 nC |
| Rds On - Drain-Source Resistance: | 33 mOhms |
| Rise Time: | 175 ns |
| Series: | IXTK90N25 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | Linear L2 |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | LinearL2 Power MOSFET |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 50 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
