PBSS5230T,215, PBSS5230T,215 PNP Transistor, -2 A, -30 V, 3-Pin SOT-23

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27130 шт., срок 7 недель

35 руб.

Кратность заказа 10 шт.

Добавить в корзину 10 шт. на сумму 350 руб.

Альтернативные предложения3

Номенклатурный номер: 8009751506

Артикул: PBSS5230T,215

Semiconductors\Discrete Semiconductors\Bipolar Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors.

Maximum Collector Base Voltage	30 V
Maximum Collector Emitter Voltage	-30 V
Maximum DC Collector Current	-2 A
Maximum Emitter Base Voltage	5 V
Maximum Operating Frequency	200 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	480 mW
Minimum DC Current Gain	300
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23(TO-236AB)
Pin Count	3
Transistor Configuration	Single
Transistor Type	PNP
Brand:	Nexperia
Collector- Base Voltage VCBO:	30 V
Collector- Emitter Voltage VCEO Max:	30 V
Collector-Emitter Saturation Voltage:	240 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Nexperia
Maximum DC Collector Current:	2 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Part # Aliases:	934057991215
Pd - Power Dissipation:	480 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Вес, г	2