QSD124, Фототранзистор, 880 нм, 24 °, 100 мВт, 2 вывод(-ов), T-1 3/4 (5mm)
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240 руб.
Мин. кол-во для заказа 12 шт.
от 25 шт. —
134 руб.
Добавить в корзину 12 шт.
на сумму 2 880 руб.
Описание
PHOTO TRANSISTOR, NPN, 880NM, 5MM; Wavelength Typ:880nm; Viewing Angle:24°; Power Consumption:100mW; No. of Pins:2Pins; Transistor Case Style:T-1 3/4 (5mm); Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Dark Current | 100 nA |
| Factory Pack Quantity | 250 |
| Fall Time | 7 us |
| Half Intensity Angle Degrees | 12 deg |
| Height | 8.77 mm |
| Length | 6.1 mm |
| Lens Color/Style | Black Transparent |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +100 C |
| Minimum Operating Temperature | -40 C |
| Operating Supply Voltage | 5 V |
| Package / Case | T-1 3/4 |
| Packaging | Bulk |
| Part # Aliases | QSD124_NL |
| Pd - Power Dissipation | 100 mW |
| Peak Wavelength | 880 nm |
| Product Category | Phototransistors |
| Rise Time | 7 us |
| RoHS | Details |
| Series | QSD124 |
| Type | Photo Transistor |
| Unit Weight | 0.010018 oz |
| Width | 6.1 mm |
| Angle of Half Sensitivity | ±12 ° |
| Collector Current | 39mA |
| Collector Emitter Voltage | 30V |
| Diameter | 6.1mm |
| Emitter Collector Voltage | 5V |
| Maximum Dark Current | 100nA |
| Maximum Wavelength Detected | 880nm |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Output Signal Type | Phototransistor |
| Package Type | T-1 3/4 |
| Saturation Voltage | 0.4V |
| Spectral Range of Sensitivity | 880 nm |
| Spectrums Detected | Infrared |
| Typical Fall Time | 7µs |
| Typical Rise Time | 7µs |
| Automotive | No |
| Cut-Off Filter | Visible Cut-off |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 12 |
| Lead Shape | Through Hole |
| Lens Color | Black Transparent |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 25 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Fall Time (ns) | 7000(Typ) |
| Maximum Light Current (uA) | 6000(Min) |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 100 |
| Maximum Rise Time (ns) | 7000(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Number of Channels per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 880 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | No |
| Supplier Package | T-1 3/4 |
| Viewing Orientation | Top View |
| Вес, г | 0.284 |
