SBC856BLT1G, Биполярный транзистор, PNP, 65 В, 0.1 А, 0.225 Вт
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Описание
Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы
Биполярный транзистор, PNP, 65 В, 0.1 А, 0.225 Вт
Технические параметры
| Корпус | sot-23 | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Part Status | Active | |
| HTS | 8541.29.00.75 | |
| Type | PNP | |
| Product Category | Bipolar Small Signal | |
| Material | Si | |
| Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Maximum Collector Base Voltage (V) | 80 | |
| Maximum Collector-Emitter Voltage (V) | 65 | |
| Maximum Emitter Base Voltage (V) | 5 | |
| Maximum Base Emitter Saturation Voltage (V) | 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| Maximum DC Collector Current (A) | 0.1 | |
| Maximum Collector Cut-Off Current (nA) | 15 | |
| Minimum DC Current Gain | 220@2mA@5V | |
| Maximum Power Dissipation (mW) | 300 | |
| Maximum Transition Frequency (MHz) | 100(Min) | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Temperature Grade | Automotive | |
| Packaging | Tape and Reel | |
| Automotive | Yes | |
| AEC Qualified Number | AEC-Q101 | |
| Pin Count | 3 | |
| Supplier Package | SOT-23 | |
| Standard Package Name | SOT | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 0.94 | |
| Package Length | 2.9 | |
| Package Width | 1.3 | |
| PCB changed | 3 | |
| Lead Shape | Gull-wing | |
| Brand: | onsemi | |
| Collector- Base Voltage VCBO: | 80 V | |
| Collector- Emitter Voltage VCEO Max: | 65 V | |
| Configuration: | Single | |
| Continuous Collector Current: | 100 mA | |
| DC Collector/Base Gain hfe Min: | 220 | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Manufacturer: | onsemi | |
| Maximum Operating Frequency: | 100 MHz | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Package / Case: | SOT-23-3 | |
| Pd - Power Dissipation: | 300 mW | |
| Product Category: | Bipolar Transistors-Pre-Biased | |
| Product Type: | BJTs-Bipolar Transistors-Pre-Biased | |
| Qualification: | AEC-Q101 | |
| Series: | BC856BL | |
| Subcategory: | Transistors | |
| Transistor Polarity: | PNP | |
| Вес, г | 0.03 |
Техническая документация
Datasheet
pdf, 217 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
