SI2304DDS-T1-GE3, транзистор, N-канал, 30V 2.6A 3-Pin SOT-23 T/R
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Описание
транзисторы полевые импортные
SI2 Series TrenchFET® Power MOSFETsVishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Технические параметры
| Структура | N-канал | |
| Корпус | sot-23 | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Part Status | Active | |
| HTS | 8541.29.00.95 | |
| Product Category | Power MOSFET | |
| Process Technology | TrenchFET | |
| Configuration | Single | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 30 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Continuous Drain Current (A) | 3.3 | |
| Maximum Drain Source Resistance (mOhm) | 60@10V | |
| Typical Gate Charge @ Vgs (nC) | 2.1@4.5V|4.5@10V | |
| Typical Gate Charge @ 10V (nC) | 4.5 | |
| Typical Input Capacitance @ Vds (pF) | 235@15V | |
| Maximum Power Dissipation (mW) | 1100 | |
| Typical Fall Time (ns) | 22 | |
| Typical Rise Time (ns) | 50 | |
| Typical Turn-Off Delay Time (ns) | 12 | |
| Typical Turn-On Delay Time (ns) | 12 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Packaging | Tape and Reel | |
| Automotive | No | |
| Supplier Package | SOT-23 | |
| Pin Count | 3 | |
| Standard Package Name | SOT-23 | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 1.02(Max) | |
| Package Length | 3.04(Max) | |
| Package Width | 1.4(Max) | |
| PCB changed | 3 | |
| Lead Shape | Gull-wing | |
| Continuous Drain Current (Id) @ 25В°C | 3.3A | |
| Power Dissipation-Max (Ta=25В°C) | 1.1W | |
| Rds On - Drain-Source Resistance | 60mО© @ 3.2A,10V | |
| Transistor Polarity | N Channel | |
| Vds - Drain-Source Breakdown Voltage | 30V | |
| Vgs - Gate-Source Voltage | 2.2V @ 250uA | |
| Brand: | Vishay Semiconductors | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Fall Time: | 5 ns | |
| Id - Continuous Drain Current: | 3.6 A | |
| Manufacturer: | Vishay | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | SOT-23-3 | |
| Part # Aliases: | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |
| Pd - Power Dissipation: | 1.7 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 6.7 nC | |
| Rds On - Drain-Source Resistance: | 60 mOhms | |
| Rise Time: | 12 ns | |
| Series: | SI2 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | TrenchFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 10 ns | |
| Typical Turn-On Delay Time: | 5 ns | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V | |
| Вес, г | 0.04 |
Техническая документация
Datasheet
pdf, 237 КБ
Datasheet SI2304DDS-T1-GE3
pdf, 236 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
