SI3407-TP, Транзистор [SOT-23]
![SI3407-TP, Транзистор [SOT-23]](https://static.chipdip.ru/lib/472/DOC018472445.jpg)
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Описание
Split Gate Technology MOSFETs
MCC Split Gate Technology MOSFETs support extremely low R DS(ON) that allows higher current density in smaller packages. These MOSFETs support increased BV dss, higher N-doping, and decreased Q gd that reduces charge coupling. These SGT MOSFETs feature improved Figure of Merit (FOM) that reduces switching and conduction losses. Typical applications include space saving and high efficiency requirement applications.
MCC Split Gate Technology MOSFETs support extremely low R DS(ON) that allows higher current density in smaller packages. These MOSFETs support increased BV dss, higher N-doping, and decreased Q gd that reduces charge coupling. These SGT MOSFETs feature improved Figure of Merit (FOM) that reduces switching and conduction losses. Typical applications include space saving and high efficiency requirement applications.
Технические параметры
| Brand: | Micro Commercial Components(MCC) |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 13.5 ns |
| Forward Transconductance - Min: | 5.5 S |
| Id - Continuous Drain Current: | 4.1 A |
| Manufacturer: | Micro Commercial Components(MCC) |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Rise Time: | 5 ns |
| Series: | P-Channel Polarity |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 28.2 ns |
| Typical Turn-On Delay Time: | 8.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.04 |
Техническая документация
Datasheet
pdf, 670 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
