SI4403CDY-T1-GE3, MOSFET 1.8V P-Channel
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см. техническую документацию
см. техническую документацию
66 руб.
Кратность заказа 2500 шт.
от 5000 шт. —
62 руб.
от 10000 шт. —
58 руб.
от 25000 шт. —
56.35 руб.
Добавить в корзину 2500 шт.
на сумму 165 000 руб.
Описание
Si4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 40 ns |
| Forward Transconductance - Min: | 40 S |
| Id - Continuous Drain Current: | 13.4 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOIC-8 |
| Pd - Power Dissipation: | 5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Rds On - Drain-Source Resistance: | 15.5 mOhms |
| Rise Time: | 16 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 101 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Техническая документация
Datasheet
pdf, 61 КБ
Трёхмерное изображение изделия
pdf, 202 КБ
Трёхмерное изображение изделия
zip, 118 КБ
