SIHG24N65E-GE3, 650V Vds 30V Vgs TO-247AC

SIHG24N65E-GE3, 650V Vds 30V Vgs TO-247AC
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1 190 руб.
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от 100 шт.970 руб.
от 500 шт.819 руб.
от 1000 шт.699.15 руб.
Добавить в корзину 50 шт. на сумму 59 500 руб.
Номенклатурный номер: 8028850347
Артикул: SIHG24N65E-GE3

Описание

E Series High Voltage MOSFETs Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Технические параметры

Brand: Vishay/Siliconix
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 500
Fall Time: 69 ns
Id - Continuous Drain Current: 24 A
Manufacturer: Vishay
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package/Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 250 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 81 nC
Rds On - Drain-Source Resistance: 145 mOhms
Rise Time: 84 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 70 ns
Typical Turn-On Delay Time: 24 ns
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 4 V

Техническая документация