TP2104N3-G
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
450 руб.
от 2 шт. —
360 руб.
от 5 шт. —
297 руб.
от 10 шт. —
272.16 руб.
Добавить в корзину 1 шт.
на сумму 450 руб.
Описание
Электроэлемент
MOSFET, P-CH, -40V, -0.175A, TO-92, Transistor Polarity:P Channel, Continuous Drain Current Id:-175mA, Drain Source Voltage Vds:-40V, On Resistance Rds(on):6ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2V, Power , RoHS Compliant: Yes
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 0.175(A) |
| Drain-Source On-Volt | 40(V) |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | TO-92 |
| Packaging | Bag |
| Pin Count | 3 |
| Polarity | P |
| Power Dissipation | 0.74(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Base Product Number | TP2104 -> |
| Current - Continuous Drain (Id) @ 25В°C | 175mA (Tj) |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| PCN Packaging | http://www.microchip.com/mymicrochip/NotificationD |
| Power Dissipation (Max) | 740mW (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Channel Type | P |
| Forward Diode Voltage | 2V |
| Maximum Continuous Drain Current | 175 mA |
| Maximum Drain Source Resistance | 10 Ω |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 740 mW |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 4.06mm |
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 150 mmho |
| Id - Continuous Drain Current: | 175 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 740 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 10 Ohms |
| Rise Time: | 4 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 5 ns |
| Typical Turn-On Delay Time: | 4 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
