VBP104S
380 руб.
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300 руб.
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Описание
Электроэлемент
DIODE, PHOTO, 940NM, 65 , SMD, No. of Pins:2Pins, Diode Case Style:SMD, Wavelength of Peak Sensitivity:940nm, Angle of Half Sensitivity :65 , Dark Current:2nA, Operating Temperature Min:-40 C, Operating Temperature Max:100 C , RoHS Compliant: Yes
Технические параметры
| Brand | Vishay Semiconductors |
| Dark Current | 2 nA |
| Factory Pack Quantity | 1000 |
| Fall Time | 100 ns |
| Half Intensity Angle Degrees | 65 deg |
| Height | 1.2 mm |
| If - Forward Current | 50 mA |
| Length | 6.4 mm |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +100 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
| Packaging | Reel |
| Pd - Power Dissipation | 215 mW |
| Peak Wavelength | 940 nm |
| Photocurrent | 35 uA |
| Product | PIN Photodiodes |
| Product Category | Photodiodes |
| Rise Time | 100 ns |
| RoHS | Details |
| Type | Silicon PIN Photodiode |
| Vf - Forward Voltage | 1 V |
| Vr - Reverse Voltage | 60 V |
| Width | 3.9 mm |
Техническая документация
Документация
pdf, 157 КБ
